Effect of atomic doping on electronic properties transport critical current and superconductivity in bulk high Tc cuprates
Creators
- 1. School of Materials Science and Engineering, Univ. of New South Wales, Kensington, NSW 2033 (Australia)
Description
By studying the effect of co-substitution on electronic properties and superconductivity it is found that a kind of substitution, provided it does not disturb the Cu-O planes directly, tends to be largely compensated by another kind of substitution which has the opposite action of that of the former. However, such compensation effect has not been observed in the case where the dopants are directly introduced to the Cu-O planes. The origins of these effects are discussed based on the measurements of electronic transport properties including the resistivity, Hall effect and electrical thermopower, lattice parameters, oxygen content and XPS. A technique based on the zone melting growth and compensation effect is developed to prepare high quality textured polycrystalline samples. Compared with the ordinary ones, samples prepared with this new method have less cracks and larger potential for carrying transport current. In addition, some characteristics of granular superconductivity, such as two peaks transition, superconductive glassy behaviour, weak link effects and etc. are also investigated in the textured and untextured samples which provide various grain boundaries and weak link states. In this paper the effects of dopant on the properties mentioned above are discussed
Additional details
Publishing Information
- Publisher
- The Metallurgical Society Inc.
- Imprint Place
- Warrendale, PA (United States)
- Imprint Title
- 1992 TMS annual meeting (Abstracts)
- Imprint Pagination
- vp.
- Journal Page Range
- p. C99.
Conference
- Title
- Minerals, Metals, and Materials Society (TMS) annual meeting and exhibition.
- Dates
- 1-5 Mar 1992.
- Place
- San Diego, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23041442
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BULK DENSITY; COPPER OXIDES; CRITICAL CURRENT; CRYSTAL DOPING; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; HALL EFFECT; HIGH-TC SUPERCONDUCTORS; LATTICE PARAMETERS; OXYGEN; POLYCRYSTALS; STOICHIOMETRY; SUPERCONDUCTIVITY; WEAK-COUPLING MODEL; X-RAY SPECTRA; ZONE MELTING
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALS; CURRENTS; DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; MATHEMATICAL MODELS; MELTING; MICROSTRUCTURE; NONMETALS; NUCLEAR MODELS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SPECTRA; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-920305--.