Published June 10, 2013
| Version v1
Journal article
Surface states and electronic structure of polar and nonpolar InN – An in situ photoelectron spectroscopy study
Creators
- 1. Institut für Physik and Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98694 Ilmenau (Germany)
Description
Valence band structure and surface states of InN with (0001), (000-1), (1-100), and (11-20) orientation were investigated in situ after growth using photoelectron spectroscopy. Depending on surface orientation, different occupied surface states are identified and differentiated from bulk contributions. For N-polar, m-plane, and a-plane InN, the surface states are located at the valence band maximum, while In-polar InN features surface states close to the Fermi level. The surface band alignment correlates with the position of surface states. For InN(0001), a much larger surface downward band bending is observed compared to N-polar, m-plane, and a-plane InN, where almost flat band conditions occur.
Additional details
Identifiers
- DOI
- 10.1063/1.4810074;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 102
- Journal Issue
- 23
- Journal Page Range
- p. 231602-231602.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44117453
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRONIC STRUCTURE; FERMI LEVEL; INDIUM NITRIDES; SEMICONDUCTOR MATERIALS; SURFACES; ULTRAVIOLET RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ENERGY LEVELS; INDIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; RADIATIONS; SPECTROSCOPY
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC