Published August 1983 | Version v1
Journal article Metadata-only

Annealing of radiation defects in Hgsub(1-x)Cdsub(x)Te crystals irradiated with electrons

Creators

  • 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.
  • 2. Tomskij Gosudarstvennyj Univ. (USSR)

Description

The stages of annealing of radiation defects in Hgsub(1-x)Cdsub(x)Te crystals in case of electron irradiation at T=300 K are investigated. It is shown that the first stage represents ''inverse'' annealing, the second one is bound to charge carriers density decrease and the third stage is characterized by the anomalous Hall effect. It is assumed that with annealing temperature growth defects in investigated crystals form stable complexes including initial material defects

Additional details

Additional titles

Original title (Russian)
Отжиг радиационных дефектов в облученных электронами кристаллах Хгсуб(1-x)Cдсуб(x)Те

Publishing Information

Journal Title
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Volume
19
Journal Issue
8
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
1298-1301
ISSN
0002-337X

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
15030630
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CADMIUM ALLOYS; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRONS; HALL EFFECT; MERCURY ALLOYS; MEV RANGE 01-10; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; TELLURIDES
Descriptors DEC
ALLOYS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; LEPTONS; MATERIALS; MEV RANGE; MOBILITY; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TELLURIUM COMPOUNDS

Optional Information

Notes
For English translation see the journal Inorganic Materials (USA).