Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs

An overview of our technique to explore single defects in silicon using a novel transistor geometry, the Schottky barrier MOSFET, is described. In this device the doped source and drain regions of a conventional MOSFET are replaced with metallic contacts. At low temperatures electron transport is dominated by direct tunneling through the space charge region formed next to the metal/semiconductor interface. If single impurities or defects are present in this region, transport reveals resonant tunneling peaks that allow investigations of the magnetic field dependence and excited states. Here we discuss different experiments where we have on separate occasions observed defects that may be related to Pt, B and Tb.