Published April 2009 | Version v1
Journal article

Room-temperature magnetoresistance in CoFeB/STO/CoFeB magnetic tunnel junctions

  • 1. CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

Description

A series of Co40Fe40B20/SrTiO3/Co40Fe40B20 magnetic tunnel junctions with a bottom-pinned synthetic antiferromagnet have been prepared by sputtering. Devices optimally annealed at 325 deg. C exhibit an exchange bias of about 65 mT, and a tunnel magnetoresistance of 2%. The smaller than predicted effect is attributed to the lack of epitaxy between the crystallized CoFeB electrodes and the SrTiO3 (STO) barrier, due to poor crystal quality of the barrier layer. Unlike MgO, well-crystallized, oriented STO does not grow on amorphous Co40Fe40B20

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jmmm.2008.04.153

Additional details

Identifiers

DOI
10.1016/j.jmmm.2008.04.153;
PII
S0304-8853(08)00562-3;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
321
Journal Issue
8
Journal Page Range
p. 1009-1011
ISSN
0304-8853
CODEN
JMMMDC

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.