Published October 2006
| Version v1
Journal article
Cathodoluminescence characterization of GaN quantum dots grown on 6H-SiC substrate by metal-organic chemical vapor deposition
Creators
- 1. Nanomaterials Laboratory, National Institute for Materials Science, Nano Device Characterization Group, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan) and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0005 (Japan)
- 2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0005 (Japan)
- 3. Nanomaterials Laboratory, National Institute for Materials Science, Nano Device Characterization Group, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan)
- 4. Nanoelectronics Collaborative Research Center, Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo Komaba, Tokyo 153-8505 (Japan)
Description
The luminescence properties of GaN quantum dots (QDs) were characterized by cathodoluminescence (CL) at room temperature via spectroscopy and monochromatic imaging. The correlations between CL results and the QD geometry measured by atomic force microscopy (AFM) were discussed considering the quantum confinement and built-in electric field in the GaN QDs. We demonstrated that CL characterizations supply abundant information about a QD system, e.g. the exciton diffusion length and the ratio of radiative recombination efficiency in the wetting layer and QDs
Additional details
Identifiers
- DOI
- 10.1016/j.scriptamat.2006.06.031;
- PII
- S1359-6462(06)00481-7;
Publishing Information
- Journal Title
- Scripta Materialia
- Journal Volume
- 55
- Journal Issue
- 8
- Journal Page Range
- p. 679-682
- ISSN
- 1359-6462
- CODEN
- SCMAF7
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38064083
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; DIFFUSION LENGTH; ELECTRIC FIELDS; EXCITONS; GALLIUM NITRIDES; GEOMETRY; HYDROGEN 6; LAYERS; METALS; MONOCHROMATIC RADIATION; QUANTUM DOTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; GALLIUM COMPOUNDS; HYDROGEN ISOTOPES; ISOTOPES; LENGTH; LIGHT NUCLEI; LUMINESCENCE; MATERIALS; MATHEMATICS; MICROSCOPY; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; NUCLEI; ODD-ODD NUCLEI; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; RADIATIONS; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.