Published November 3, 2008
| Version v1
Journal article
Homo and hetero epitaxy of Germanium using isobutylgermane
- 1. CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy)
- 2. CESI Ricerca S.P.A., Via Rubattino 54, 20134 Milano (Italy)
Description
Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal-Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA). High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH3 as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.08.137Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.08.137;
- PII
- S0040-6090(08)00897-3;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 1
- Journal Page Range
- p. 404-406
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 5. International conference on silicon epitaxy and heterostructures
- Acronym
- ICSI-5
- Dates
- 20-24 May 2007
- Place
- Marseille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40059035
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIC HYDRIDES; ATOMIC FORCE MICROSCOPY; EPITAXY; GALLIUM ARSENIDES; GERMANIUM; LAYERS; ORGANOMETALLIC COMPOUNDS; RAMAN SPECTROSCOPY; SURFACES; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELEMENTS; GALLIUM COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; LASER SPECTROSCOPY; METALS; MICROSCOPY; ORGANIC COMPOUNDS; PNICTIDES; SCATTERING; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.