Published 1992
| Version v1
Miscellaneous
Analysis of YBaCuO film growth process by average energy ion scattering method
Description
Analysis of spectra of channeled protons and backscattering enabled to investigate the process of growth of YBa2Cu3O7-x superconducting films. Energy spectra of 230 keV initial energy protons were measured. It is shown, that formation of δ-oriented YBa2Cu3O7-8 monocrystal layer takes place at the first stage of growth. Formation of up to 20 monolayers of material takes place. 2 refs.; 2 figs
Additional details
Additional titles
- Original title (Russian)
- Анализ процесса роста пленок YBaCuO методом рассеяния ионов средних энергий
Publishing Information
- Imprint Title
- Proceedings of 21. All-Union conference on physics of charged particles interaction with crystals
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. 104-106.
- Report number
- INIS-RU--361
Conference
- Title
- 21. All-Union conference on physics of charged particles interaction with crystals.
- Dates
- 27-29 May 1991.
- Place
- Moscow (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25020642
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BACKSCATTERING; BARIUM COMPOUNDS; CRYSTAL GROWTH; CUPRATES; HIGH-TC SUPERCONDUCTORS; INCIDENCE ANGLE; KEV RANGE 100-1000; MONOCRYSTALS; ORIENTATION; PROTON BEAMS; PROTON CHANNELING; SUPERCONDUCTING FILMS; THICKNESS; YTTRIUM COMPOUNDS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BEAMS; CHANNELING; COPPER COMPOUNDS; CRYSTALS; DIMENSIONS; ENERGY RANGE; FILMS; KEV RANGE; NUCLEON BEAMS; OXYGEN COMPOUNDS; PARTICLE BEAMS; SCATTERING; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- Imprint:Materialy 21. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.;Chast' 3. Nekotorye voprosy ionnoj implantatsii.