Kinetics of nickel particle formation on silicon substrate with a buffer layer of niobium nitride
Creators
- 1. Ulyanovsk State University, Ulyanovsk (Russian Federation)
- 2. Institute of Nanotechnology of Microelectronics of the Russian Academy of Science, Moscow (Russian Federation)
- 3. Scientific-Manufacturing Complex 'Technological Centre', Moscow, Zelenograd (Russian Federation)
Description
The size, form and distribution function of catalyst particles define the quality of synthesized arrays of carbon nanotubes. In this work, we study the kinetics of catalyst particle formation from the thin nickel film (9 nm) deposited on the silicon substrate (SiO2/Si) with a buffer layer of niobium nitride at the temperature of 880 °C. In the experiment, we have obtained the time dependences of the average radius, average height and concentration of nickel particles. The experimental data are satisfactorily described by simulations based on the wetting transition theory. Comparison of the simulation results and experimental data allows us to estimate the effective interaction potential between the nickel film and buffer layer of niobium nitride. Besides, we have estimated the viscosity of the nickel confirming an undercooled liquid state of the nanosized nickel film at the temperature of 880 °C. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-648X/ab7870Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 32
- Journal Issue
- 24
- Journal Page Range
- [8 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52058095
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CARBON NANOTUBES; CATALYSTS; DEPOSITION; DISTRIBUTION FUNCTIONS; EXPERIMENTAL DATA; KINETICS; NICKEL; NIOBIUM NITRIDES; SILICON; SILICON OXIDES; SIMULATION; SUBSTRATES; THIN FILMS; TIME DEPENDENCE; VISCOSITY
- Descriptors DEC
- CARBON; CHALCOGENIDES; DATA; ELEMENTS; FILMS; FUNCTIONS; INFORMATION; METALS; NANOSTRUCTURES; NANOTUBES; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS