Helium diffusion in nickel at high temperatures

Helium has been implanted at certain temperatures between 800 and 12500C into single and polycrystalline Ni-samples with implantation depths between 15 and 90 μm. Simultaneously the helium reemission from the sample is measured by a mass-spectrometer. It has been shown that the time dependence of the observed reemission rate is governed by volume diffusion of the helium. Measuring this time dependence as a function of temperature the helium diffusion constant has been determined. The He-diffusion is interpreted as a interstitial diffusion hindered by thermal vacancies. Depending on the implantation depth more or less of the implanted helium remains in the sample and forms large helium bubbles. (orig./GSCH)