Published December 5, 2006
| Version v1
Journal article
Fabrication and characterization of photoluminescent Mn-doped-Zn2SiO4 films deposited on silicon by pulsed laser deposition
- 1. State Key Laboratory for Silicon Materials, CMSCE, Zhejiang University, Hangzhou 310027 (China)
Description
Manganese-doped zinc silicate photoluminescent films were prepared on silicon wafer using pulsed laser deposition technique. The effects of heat treatment on the optical and structural properties were investigated by means of X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), and photoluminescence (PL) spectra. It was found in XRD patterns and FTIR that crystalline zinc silicate was formed on the silicon wafer when the annealing temperature was above 700 deg. C. The PL spectra showed that the peak wavelength of the green emission was at 525 nm with a decay time of 12.5 ms
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2006.07.021;
- PII
- S0040-6090(06)00819-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 4
- Journal Page Range
- p. 1877-1880
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38058157
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DOPED MATERIALS; ENERGY BEAM DEPOSITION; FABRICATION; FILMS; FOURIER TRANSFORM SPECTROMETERS; FOURIER TRANSFORMATION; INFRARED SPECTRA; LASER RADIATION; MANGANESE; PHOTOLUMINESCENCE; PULSED IRRADIATION; SILICON; X-RAY DIFFRACTION; ZINC SILICATES
- Descriptors DEC
- COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; HEAT TREATMENTS; INTEGRAL TRANSFORMATIONS; IRRADIATION; LUMINESCENCE; MATERIALS; MEASURING INSTRUMENTS; METALS; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SCATTERING; SEMIMETALS; SILICATES; SILICON COMPOUNDS; SPECTRA; SPECTROMETERS; SURFACE COATING; TRANSFORMATIONS; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.