Published May 2005 | Version v1
Report Metadata-only

Study of radiation effects on semiconductor devices

Creators

  • 1. Japan Aerospace Exploration Agency, Inst. of Space Technology and Aeronautics, Chofu, Tokyo (Japan)
  • 2. Ryoei Technica Co., Kamakura, Kanagawa (Japan)
  • 3. National Inst. of Radiological Sciences, Chiba, Chiba (Japan)

Description

Finer structure of recent semiconductor devices has made them more sensitive to space radiation, and to understand the mechanism of errors or failures caused by radiation has been becoming more important. SEU and MBU of an SRAM irradiated by protons from different directions were observed and their energy and angular dependence were analyzed. SEB sensitivity of power MOSFETs were also observed. Power MOSFETs developed for space use were proven to have SEB immunity up to rated voltage by Xe irradiation. However, it was found out that SJ-MOSFETs with a new structure had lower SEB tolerance than standard MOSFETs although they were expected to have higher SEB tolerance. (author)

Part of:
2004 annual report of the research project with heavy ions at NIRS-HIMAC

Additional details

Publishing Information

Imprint Title
2004 annual report of the research project with heavy ions at NIRS-HIMAC
Imprint Pagination
339 p.
Journal Page Range
p. 190-191
Report number
NIRS-M--180

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
37045547
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
ANGULAR DISTRIBUTION; ELECTRICAL PROPERTIES; HEAVY IONS; HIMAC ACCELERATOR; IRRADIATION; MOSFET; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; SEMICONDUCTOR DEVICES; SILICON
Descriptors DEC
ACCELERATORS; BEAMS; CHARGED PARTICLES; CYCLIC ACCELERATORS; DISTRIBUTION; DOSES; ELEMENTS; FIELD EFFECT TRANSISTORS; HEAVY ION ACCELERATORS; IONS; MOS TRANSISTORS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; SYNCHROTRONS; TRANSISTORS

Optional Information

Notes
3 figs., 1 tab.
Secondary number(s)
HIMAC--106