Published October 27, 2014
| Version v1
Journal article
Critical boron-doping levels for generation of dislocations in synthetic diamond
Creators
- 1. Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain)
- 2. Université Grenoble Alpes, Institut NEEL, 25 av. des Martyrs, 38042 Grenoble (France)
- 3. GEMaC, CNRS and Université de Versailles St Quentin, 45 Avenue des États-Unis, 78035 Versailles (France)
Description
Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 1020at/cm3 range in the 〈111〉 direction and at 3.2 × 1021 at/cm3 for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.
Additional details
Identifiers
- DOI
- 10.1063/1.4900741;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 17
- Journal Page Range
- p. 173103-173103.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46016843
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON ADDITIONS; BURGERS VECTOR; CONCENTRATION RATIO; CRYSTAL DEFECTS; DIAMONDS; DISLOCATIONS; LAYERS; STRAINS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALLOYS; BORON ALLOYS; CARBON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELECTRON MICROSCOPY; ELEMENTS; LINE DEFECTS; MICROSCOPY; MINERALS; NONMETALS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC