The observation on atom displacements of silicon highly doped by arsenic during post-annealing

The behaviour of As and Si atoms in Si highly doped by As ion beams was studied after rapid thermal annealing during low-temperature post-annealing by the variation of the sheet resistance, channeling experiments and transmission electron microscopy (TEM) observations. Impurity profiles were measured by 1.6 MeV He+ ion beam backscattering. The results of the channeling angle scanning experiments combined with TEM observations indicate that the Si atom displacement results from the contraction of the Si lattice at the As dopant layer inducing dislocation loops. Solubility problems have been discussed