A Study on the Thermal Neutron Filter for the Irradiation of Electronic Materials at HANARO

The representative example is a technique of making the semiconductor with the transmutation using the pure Si. This NTD (Neutron Transmutation Doping) Si is used as a high-quality semiconductor because it has a uniform resistance. Likewise, the electronic materials are being investigated to improve the performance of material using the neutron irradiation method. The mechanism for reaction between the electronic materials and the neutrons depends on the energy of the neutron. Capturing reaction by thermal neutrons causes the transmutation and a lot of defects are made by fast neutrons. The study for the effect by such neutron energy is necessary to understand the performance improvement of the irradiated electronic materials. The thermal neutron filter was investigated to be used for the irradiation of electronic materials at HANARO. IP irradiation hole was selected and the irradiation device was designed. The analysis was conducted considering four candidate materials