Published May 1994 | Version v1
Journal article Metadata-only

Photoelectric and emissive properties of heterostructures on the base of lead sulfide and A2B6 compounds

Creators

  • 1. Drogobychskij Pedagogicheskij Inst., Drogobych (Ukraine)

Description

Photosensitivity of anisotypic heterostructures based on lead sulfide (p-PbS/n-ZnSe, n-PbS/p-ZnTe) is studied. Interval of photosensitivity of the given structures lies within the nearest IR-region of spectrum (2.5-5.0 μm) at the liquid nitrogen temperature

Additional details

Additional titles

Original title (Russian)
Фотоэлектрические и излучательные свойства гетероструктур на основе сульфида свинца и соединений А

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
30
Journal Issue
5
Journal Page Range
p. 616-618.
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26020227
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER DENSITY; CHARGE CARRIERS; ELECTROLUMINESCENCE; ENERGY GAP; EPITAXY; HETEROJUNCTIONS; LAYERS; LEAD SULFIDES; PHOTOLUMINESCENCE; PHOTOSENSITIVITY; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; ZINC TELLURIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; EMISSION; LEAD COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; SEMICONDUCTOR JUNCTIONS; SENSITIVITY; SULFIDES; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; ZINC COMPOUNDS