Modelling the generalized oscillator strength for low-energy electron or positron inelastic scattering

Our present work is a first step towards a twofold aim. The first is to model, consistently, a division of the total OOS obtained from optical data, into contributions due to the excitation of electrons in valence bands and in separate inner shells, so as to be able to incorporate the generation of secondary electrons and characteristic secondary radiation into high-precision optical-data Monte Carlo simulations. The second, related aim is to find improved, yet simple OOS models, which will be applied where optical data are cumbersome or not easily available. (orig.)