Published April 2003 | Version v1
Journal article

Electrical properties of InAs irradiated with protons

  • 1. Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, Tomsk, 634050 (Russian Federation)
  • 2. State Research Center at the Karpov Institute of Physical Chemistry (Obninsk Branch), Obninsk, Kaluga oblast, 249033 (Russian Federation)

Description

The results of studying the electrical properties of InAs irradiated with 5-MeV H+ ions at a dose of 2 x 1016 cm-2 are reported. It is shown that, independently of the doping level and the conductivity type of the as-grown InAs, InAs always has the n+-type conductivity after irradiation (n ≅ (2-3) x 1018 cm-3). The phenomenon of pinning of the Fermi level in the irradiated material is discussed. The thermal stability of radiation damage in InAs subjected to postirradiation annealing at temperatures as high as 800 deg. C was studied

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
37
Journal Issue
4
Journal Page Range
p. 390-395
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 37, 408-413 (No. 4, 2003); (c) 2003 MAIK ''Nauka / Interperiodica''.