Published April 24, 1989 | Version v1
Journal article Metadata-only

Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs

Creators

  • 1. IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598

Description

Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2 x 1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 A) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850 0C for nominal zero second

Additional details

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
54
Journal Issue
17
Series
Appl. Phys. Lett.
Journal Page Range
1696-1698
ISSN
0003-6951
CODEN
APPLA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20048413
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ARSENIC IONS; ETCHING; FABRICATION; GALLIUM ARSENIDES; GOLD; ION IMPLANTATION; KEV RANGE 10-100; MAGNESIUM; PERFORMANCE; PHYSICAL RADIATION EFFECTS; PLATINUM; SCHOTTKY BARRIER DIODES; THIN FILMS; TITANIUM; VERY HIGH TEMPERATURE
Descriptors DEC
ALKALINE EARTH METALS; ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; KEV RANGE; METALS; PLATINUM METALS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENTS