Published August 2010 | Version v1
Journal article

4 GHz bit-stream adder based on ΣΔ modulation

  • 1. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)

Description

The conventional circuit model of a bit-stream adder based on sigma delta (ΣΔ) modulation is improved with pipeline technology to make it work correctly at high frequencies. The integrated circuit (IC) of the bit-stream adder is designed with the source coupled logic structure and designed at the transistor level to increase the operating frequency. The IC is fabricated in TSMC's 0.18-μm CMOS process. The chip area is 475 x 570 μm2. A fully digital ΣΔ signal generator is designed with a field programmable gate array to test the chip. Experimental results show that the chip meets the function and performance demand of the design, and the chip can work at a frequency of higher than 4 GHz. The noise performance of the adder is analyzed and compared with both theory and experimental results. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/31/8/085001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
31
Journal Issue
8
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42071725
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
INTEGRATED CIRCUITS; MODULATION; NOISE; TRANSISTORS
Descriptors DEC
ELECTRONIC CIRCUITS; MICROELECTRONIC CIRCUITS; SEMICONDUCTOR DEVICES