4 GHz bit-stream adder based on ΣΔ modulation
Creators
- 1. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)
Description
The conventional circuit model of a bit-stream adder based on sigma delta (ΣΔ) modulation is improved with pipeline technology to make it work correctly at high frequencies. The integrated circuit (IC) of the bit-stream adder is designed with the source coupled logic structure and designed at the transistor level to increase the operating frequency. The IC is fabricated in TSMC's 0.18-μm CMOS process. The chip area is 475 x 570 μm2. A fully digital ΣΔ signal generator is designed with a field programmable gate array to test the chip. Experimental results show that the chip meets the function and performance demand of the design, and the chip can work at a frequency of higher than 4 GHz. The noise performance of the adder is analyzed and compared with both theory and experimental results. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/31/8/085001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 31
- Journal Issue
- 8
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42071725
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- INTEGRATED CIRCUITS; MODULATION; NOISE; TRANSISTORS
- Descriptors DEC
- ELECTRONIC CIRCUITS; MICROELECTRONIC CIRCUITS; SEMICONDUCTOR DEVICES