Behaviour of Li residual impurity in high-resistance cadmium telluride under the annealing of short duration

The results of study are given on the behaviour of Li residual impurity using PL spectra of high-resistant p-type cadmium telluride at 4.2 K before and after its short-term annealing at 873 K in the atmosphere of saturated cadmium and tellurium vapors, as well as in the atmosphere of Cd, Hg and Te vapors formed above Cd0.2Hg0.8Te solid solution. It is established that short-term annealing of specially nondoped specimens of p-type CdTe, containing Li residual impurity in saturated cadmium vapors at 873 K results in conductivity changes from p-type to n-type in the near-the-surface material layer due to variation of stoichiometry deviation to the cadmium excess, and redestribution of Li impurity from Cd nodes into interstitials