Published November 1, 1984 | Version v1
Journal article

Criteria for physical domains in laboratory and solid-state plasmas

Creators

  • 1. Schools of Electrical Engineering and Applied Physics, Cornell University, Ithaca, New York 14853

Description

Physical domains relevant to laboratory and solid-state plasmas are described in terms of relevant characteristic parameters. Strongly- and weakly-coupled classical plasmas are divided according to the plasma parameter GAMMA, whereas quantum and classical domains are separated according to the thermal DeBroglie wavelength Λ, nondimensionalized through mean interparticle spacing. These parameters are found to obey the relation Λ2 = (π/16)1/sup //3(k/sub B/T/R*)GAMMA4/sup //3, where T is temperature and the Rydberg constant R* includes the dielectric constant of the medium and effective mass of charge carriers. The weakly-coupled degenerate plasma is described in terms of the quantum compression parameter r/sub s/, which represents interparticle spacing measured in Bohr radii. An alternative description of this domain is given in terms of a new quantum parameter (labeled GAMMA/sub Q/) whose definition includes the Thomas--Fermi screening length in place of the Debye length in the classical plasma parameter. A graphical display in terms of appropriately nondimensionalized particle number density and temperature, respectively, reveals that all nonrelativistic, nonmagnetic plasma domains are included over the unit area of this graph. Application of these findings is made to GaAs and InP at 300 and 1000 0K in the intrinsic domain. Incorporating recent empirical expressions for effective mass, energy gap, and Fermi energy, it is found that at the lower temperature, the conducting solid-state plasmas of these semiconductors are weakly coupled and classical. At the higher temperature, due primarily to increased carrier concentration, the plasmas grow degenerate

Additional details

Publishing Information

Journal Title
J. Appl. Phys.
Journal Volume
56
Journal Issue
9
Series
J. Appl. Phys.
Journal Page Range
2530-2535
ISSN
0021-8979