Published April 1985
| Version v1
Journal article
Mechanisms of diffusion of implanted boron ions in silicon
- 1. Belorusskij Gosudarstvennyj Univ., Minsk
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Механизмы диффузии ионно-внедренного бора в кремнии
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 19
- Journal Issue
- 4
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 739-742
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17014191
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- BORON IONS; CARRIER DENSITY; CRYSTAL DEFECTS; CRYSTALS; DIFFUSION; ION IMPLANTATION; SILICON; SILICON IONS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; IONS; SEMIMETALS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).