Published August 2005
| Version v1
Journal article
Flat panel display - Impurity doping technology for flat panel displays
Creators
- 1. Advanced Technology Planning, Sumitomo Eaton Nova Corporation, SBS Tower 9F, 10-1, Yoga 4-chome, Setagaya-ku, 158-0097 Tokyo (Japan)
Description
Features of the flat panel displays (FPDs) such as liquid crystal display (LCD) and organic light emitting diode (OLED) display, etc. using low temperature poly-Si (LTPS) thin film transistors (TFTs) are briefly reviewed comparing with other FPDs. The requirements for fabricating TFTs used for high performance FPDs and system on glass (SoG) are addressed. This paper focuses on the impurity doping technology, which is one of the key technologies together with crystallization by laser annealing, formation of high quality gate insulator and gate-insulator/poly-Si interface. The issues to be solved in impurity doping technology for state of the art and future TFTs are clarified
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.05.032;
- PII
- S0168-583X(05)00774-3;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 237
- Journal Issue
- 1-2
- Journal Page Range
- p. 395-401
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 15. international conference on ion implantation technology
- Dates
- 25-27 Oct 2004
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37022921
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTALLIZATION; GLASS; IMPURITIES; INTERFACES; LASERS; LIGHT EMITTING DIODES; LIQUID CRYSTALS; PERFORMANCE; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; TRANSISTORS
- Descriptors DEC
- CRYSTALS; FILMS; FLUIDS; HEAT TREATMENTS; LIQUIDS; PHASE TRANSFORMATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.