Published 1978 | Version v1
Miscellaneous Metadata-only

Reconstruction of a semiconductor (III) surface

Creators

  • 1. Pretoria Univ. (South Africa). Dept. of Physics
  • 2. South Africa Univ., Pretoria. Dept. of Physics

Description

This article discusses the possible reconstruction of the surface of certain silicon compounds and diamond. The atomic bundle was investigated by means of the relevant quantum mechanical calculations. The reasons for differences between theory and practice are discussed

Additional details

Additional titles

Original title (Afrikaans)
Rekonstruksie van halfgeleier (III) oppervlakte

Publishing Information

Imprint Title
Theoretical physics
Journal Page Range
p. F1-F8.
Report number
INIS-mf--5323

Conference

Title
13. annual seminar on theoretical physics.
Dates
11 - 14 Jul 1978.
Place
Pretoria, South Africa.

INIS

Country of Publication
South Africa
Country of Input or Organization
South Africa
INIS RN
10492538
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BINDING ENERGY; COULOMB FIELD; DIAMONDS; ELECTRONIC STRUCTURE; SEMICONDUCTOR DEVICES; SILICON; SURFACES
Descriptors DEC
CARBON; ELECTRIC FIELDS; ELEMENTS; ENERGY; MINERALS; NONMETALS; SEMIMETALS