Published 2007 | Version v1
Miscellaneous

Stress Distribution in the Direction of 1-D Motion of an Interstitial Loop

  • 1. Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)
  • 2. Korea Basic Science Institute, Daejeon (Korea, Republic of)

Description

We studied a stress distribution around a dislocation loop to know the effect of compressive stress on 1-D motion of defect clusters. And we presented the effect of 1-D motion on the radiation hardening. Two mechanisms of radiation hardening have been proposed. One is a dispersed barrier hardening mechanism. This explains defect clusters as barriers to a dislocation motion. And the other is a cascade induced source hardening mechanism, which places emphasis on the role of defects as a Cottrell atmosphere for dislocation motions. The interaction between dislocation and defect clusters has been considered, but the self-motion of clusters was not considered. No model has given a solution to the 1-D motion of defect clusters of a size of over 2 nm. Though the 1-D motion of defect clusters was observed by many researchers, they did not consider its effect on radiation hardening. To establish the effect of a 1-D motion on radiation damage, it is important to clarify the driving force of this motion. At this time, we tried to find out stress field into the motion direction of clusters through calculations with equations suggested by T. A. Kraishi et al

Part of:
Proceedings of the KNS spring meeting

Additional details

Publishing Information

Publisher
KNS
Imprint Place
Daejeon (Korea, Republic of)
Imprint Title
Proceedings of the KNS spring meeting
Imprint Pagination
[1 CD-ROM]
Journal Page Range
[2 p.]

Conference

Title
2007 spring meeting of the KNS
Dates
10-11 May 2007
Place
Jeju (Korea, Republic of)

INIS

Country of Publication
Korea, Republic of
Country of Input or Organization
Korea, Republic of
INIS RN
38113316
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
COMPUTER CALCULATIONS; DEFECTS; DISLOCATIONS; EQUATIONS; RADIATION HARDENING; STRESSES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; HARDENING; LINE DEFECTS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS

Optional Information

Notes
12 refs, 3 figs