Low energy RBS-channeling measurement system with the use of a time-of-flight scattered ion detector

We have developed a low energy Rutherford backscattering spectrometry-ion channeling measurement system for the analysis of thin films and solid surfaces with the use of several tens keV hydrogen ions and a time-of-flight particle energy spectrometer. For the detection of the scattered ions new TOF spectrometer has been developed, which consists of two micro-channel-plate detectors. The pulsing of the primary ion beam is not necessary for this type of TOF measurement, and it is possible to observe continues scattered ion beams. The dimension of whole system is very compact compared to the conventional RBS-channeling measurement system with the use of MeV He ions. The energy resolution, δ E/E, for 25 keV H+ was 4.1%, which corresponds to the depth resolution of 4.8 nm for silicon. The depth resolution of our system is better than that of conventional RBS system with MeV helium ions and solid state detectors. We have demonstrated the ion channeling measurement by this system with 25 keV hydrogen ions. The system can be available well to the analysis of thin films and solid surfaces with the use of the ion channeling effect. The observation of the reaction between Fe and hydrogen terminated silicon surface was also demonstrated. (J.P.N.)