Published March 16, 1989
| Version v1
Journal article
Deep traps in doubly implanted p-type silicon
- 1. Uniwersytet Marii Curie-Sklodowskiej, Lublin (Poland). Inst. Fizyki
Description
The influence of technological impurities on deep level spectra in Si(p) is studied. Defects created by Ne+ ions in samples containing high oxygen and carbon concentration are investigated using DLTS, C-U, and I-U methods. Ionization energies and capture cross sections of the observed traps are calculated. For one series of doubly implanted samples after annealing at 600 0C minority carrier traps are observed in the DLTS spectra. For these samples a model of the Schottky junction with a high diffusion barrier and a heavily compensated subsurface layer is proposed. (author)
Additional details
Additional titles
- Subtitle (English)
- DLTS and C-U measurements
Publishing Information
- Journal Title
- Physica Status Solidi A
- Journal Volume
- 112
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 415-418
- ISSN
- 0031-8965
- CODEN
- PSSAB
Conference
- Title
- International conference on ion implantation in semiconductors and other materials.
- Dates
- 12-17 Sep 1988.
- Place
- Lublin (Poland).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 20064769
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CAPACITANCE; CARBON 12 BEAMS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ENERGY LEVELS; IMPURITIES; ION BEAMS; ION IMPLANTATION; NEON ISOTOPES; OXYGEN 16 BEAMS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON; SPECTRA; TRAPS
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; MATERIALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS