Neutron alloying of Sisub(1-x)Gesub(x) alloy in a silicon-rich composition range

The investigation of the process of neutron alloying Sisub(1-x)Gesub(x) (18 >= x >= 0.8 at.%) monocrystals in the WWR-M reactor channel is carried out. The initial crysta have -type conductivity. It is shown that after irradiation and annealing of radiation defects over the whole investigated composition range the material has a hole-type conductivity. Temperature dependences of the specific resistance of neutron-doped alloy in the 300-77.4 K range, which obey the Arrhenius elementary law are indicated. It is pointed out that the irradiated material properties are determined by the following factors: alloying level, overlap effect of localized states of the impurity zone, Ga ionization energy and fluctuations of the solid solution composition