Structural and ferromagnetic properties of InMnAs thin films including MnAs nanoclusters grown on InP substrates
- 1. Department of Electrical Engineering, Nagaoka University of Technology, 1603-1, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan)
- 2. Center for Instrumental Analysis, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-0206 (Japan)
- 3. Department of Electrical and Electronic Systems Engineering, Nagaoka National College of Technology, 888, Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)
Description
The structural, magnetic, and electrical properties of InMnAs thin films were investigated to elucidate their ferromagnetism for potential applications in InP-based spintronics and magneto-optical integrated circuits. The films were prepared on InP substrates by molecular beam epitaxy at growth temperatures of 220–280 °C without further annealing. Except for the 220 °C-grown sample, the films showed ferromagnetism at room temperature. We found that the room-temperature ferromagnetism was predominantly caused by the existence of hexagonal MnAs clusters embedded in a homogeneous InMnAs matrix (InMnAs:MnAs system). High-resolution transmission electron microscope images revealed that the MnAs nanoclusters formed either elongated or round structures in the InMnAs host matrix. The experimental results indicate that the mixed systems of hexagonal MnAs embedded in InMnAs may provide potential ferromagnetic building blocks for InP-based spintronics. - Highlights: • InMnAs films on InP were investigated for applications in InP-based spintronics. • The MnAs nano-clusters are formed in InMnAs matrix. • The InMnAs:MnAs film provides ferromagnetic structure for InP-based spintronics.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2016.12.020Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2016.12.020;
- PII
- S0040-6090(16)30833-1;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 622
- Journal Page Range
- p. 136-141
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50023792
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRICAL PROPERTIES; FERROMAGNETISM; INDIUM PHOSPHIDES; INTEGRATED CIRCUITS; MAGNETIC MATERIALS; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELECTRONIC CIRCUITS; EPITAXY; FILMS; HEAT TREATMENTS; INDIUM COMPOUNDS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; MICROELECTRONIC CIRCUITS; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.