Present status of room temperature semiconductor detectors

The basic specifications of semiconductor detectors used for the registration of ionizing radiations at room temperature are given. The main peculiarities and process of fabrication of detectors based on GaAs, CdTe, HgI2 are considered. It is shown that currently a good energy resolution is obtained at room temperature for low energy γ-radiation with small-size detectors based on GaAs, CdTe and HgI2. CdTe- and HgI2-detectors are technologically feasible although expensive. Complex semiconductors: AlSb, InP, ZnTe, CdTe, WSe3, CdSe, BiI3, Cs3Sb and HgI2 are most promising for ionizing radiation spectrometry