Published January 1, 2019 | Version v1
Journal article

Application of PI-VM for management of the metal target plasma etching processes in OLED display manufacturing

  • 1. Samsung Display Co. Ltd, Yongin-si, Gyeonggi-do (Korea, Republic of)
  • 2. Department of Nuclear Engineering, Seoul National University, Seoul (Korea, Republic of)

Description

Generation of the defect particles during the plasma-assisted metal dry etching process is induced by the various mechanisms. Most of these mechanisms are caused by the non-volatility of metal-halide compounds generated during the etching process. Degeneration of the metal etching process chamber condition is observed as the frequent process fault caused by the defects, but the worse condition is not recovered by itself. Because of this property of the metal etching process, proper work of the preventive maintenance (PM) to restore the process chamber or the addition of a discharge cleaning step is required periodically. However, inadequate PM or discharge cleaning by the uncertain cause analysis of the defect generation should be a just temporary remedy, and might lead the repetition of similar problems. To solve this problem, the virtual metrology (VM) model based on the plasma information (PI) parameters, known as PI-VM, was developed and applied for the defect control of the metal layer dry etching processes in organic light emitting diode (OLED) display manufacturing. To obtain the information about the generation rates of non-volatile compounds and their removal rates by the exhaustion system, PI parameters are designed with the consideration of the reaction kinetics in the metal etching plasma volume, sheath, and reacting surface using the big data of equipment engineering system (EES) and optical emission spectroscopy (OES) accumulated during the mass production process. The developed PI-VM index could be applied to a 2–3 h earlier alarm system for the defect occurrence, and had succeeded over 90% of alarm rate. This PI-VM alarm was applied to predictive control of the process by the early substitution of the discharge cleaning step or by the repair of the proper parts in the process chamber. By the control of processes based on the predicted results of the PI-VM, management of the mass production line with about 30% decreased defect was possible in OLED display manufacturing. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6587/aae2db

Additional details

Identifiers

Publishing Information

Journal Title
Plasma Physics and Controlled Fusion
Journal Volume
61
Journal Issue
1
Journal Page Range
[9 p.]
ISSN
0741-3335
CODEN
PPCFET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52042390
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
CONTROL; DEFECTS; EMISSION SPECTROSCOPY; ETCHING; LIGHT EMITTING DIODES; MAINTENANCE; MANUFACTURING; PLASMA; REACTION KINETICS
Descriptors DEC
KINETICS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY; SURFACE FINISHING