Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers
- 1. Tokyo University of Technology, 1404 Katakura, Hachioji 192-0892 (Japan)
Description
The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection
Additional details
Identifiers
- DOI
- 10.1063/1.1769101;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 96
- Journal Issue
- 4
- Journal Page Range
- p. 1904-1908
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36062590
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; EXCITATION; LEAD; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALS; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; EPITAXY; LUMINESCENCE; MATERIALS; METALS; PHOTON EMISSION; SELENIDES; SELENIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2004 American Institute of Physics