Sorption Properties Of RF Reactive Sputtered TiOx Thin Films
- 1. Technical University of Sofia, 8 Kl. Ohridski Blvd, 1756 Sofia (Bulgaria)
- 2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia (Bulgaria)
Description
The present research is focused on the sensing behavior of sputtered titanium oxide (TiOx) thin films. In order to deposit TiOx thin films the method of RF reactive sputtering of titanium target in the presence of oxygen as reactive gas is used. RF sputtering technology for thin film deposition has been elaborated on and the technological conditions during deposition have been optimized to obtain films with good quality. Films of various thicknesses have been deposited on quartz resonators in order to use the quartz crystal microbalance (QCM) method for studying their gas sensing properties. The films' microstructure and physical properties are identified by TEM, Raman and laser elipsometry analysis. The ultimate purpose of the research is to apply TiOx thin films in gas sensors. The sorption properties of various sub-stoichiometric and stoichiometric TiO2 thin films to ammonia and other gases are investigated
Additional details
Identifiers
- DOI
- 10.1063/1.2733506;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 899
- Journal Issue
- 1
- Journal Page Range
- p. 765
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 6. international conference of the Balkan Physical Union
- Dates
- 22-26 Aug 2006
- Place
- Istanbul (Turkey)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39074485
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL STRUCTURE; CRYSTALS; DEPOSITION; ELLIPSOMETRY; MICROBALANCES; MICROSTRUCTURE; QUARTZ; RAMAN SPECTROSCOPY; RESONATORS; SENSORS; SORPTION; SPUTTERING; STOICHIOMETRY; THIN FILMS; TITANIUM; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- BALANCES; CHALCOGENIDES; ELECTRON MICROSCOPY; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; LASER SPECTROSCOPY; MEASURING INSTRUMENTS; MEASURING METHODS; METALS; MICROSCOPY; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; WEIGHT INDICATORS
Optional Information
- Notes
- (c) 2007 American Institute of Physics