Published September 1982
| Version v1
Journal article
Polaron effective mass in zero-gap semiconductor HgTe
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Эффективная масса полярона в безщелевом полупроводнике HgTe
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 24
- Journal Issue
- 9
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 2831-2834
- ISSN
- 0367-3294
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14769851
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANALYTICAL SOLUTION; BAND THEORY; EFFECTIVE MASS; ELECTRONS; ENERGY GAP; MERCURY TELLURIDES; PERMITTIVITY; PERTURBATION THEORY; POLARONS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CHALCOGENIDES; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MASS; MATERIALS; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; QUASI PARTICLES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Solid State (USA).