Published August 2004
| Version v1
Journal article
Growth of thermal oxide layers on GaAs and InP in the presence of ammonium heptamolybdate
- 1. Voronezhskij Gosudarstvennyj Univ., (Russian Federation)
Description
Processes of thermal oxidation of GaAs and InP in the presence of ammonium heptamolybdate were studied using the methods of X-ray fluorescence analysis and IR spectroscopy at temperatures 480-580 Deg C. It was ascertained that introduction of the activator into the system results in accelerated growth of layers on semiconductors due to participation of anionic component of the chemostimulator in oxidation processes. The activator is integrated into the salts formed
Abstract (Russian)
С использованием методов рентгенофлуоресцентного анализа и ИК спектроскопии исследованы процессы термооксидирования GaAs и InP в присутствии гептамолибдата аммония при температурах 480-580 Deg C. Установлено, что введение в систему данного активатора приводит к ускоренному росту слоев на полупроводниках за счет участия анионной составляющей хемостимулятора в процессах окисления. Активатор включается в образующиеся слоиAdditional details
Additional titles
- Original title (Russian)
- Рост термических оксидных слоев на GaAs и InP в присутствии гептамолибдата аммония
Publishing Information
- Journal Title
- Zhurnal Neorganicheskoj Khimii
- Journal Volume
- 49
- Journal Issue
- 8
- Journal Page Range
- p. 1243-1247
- ISSN
- 0044-457X
- CODEN
- ZNOKAQ
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 36052269
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ACTIVATION ENERGY; AMMONIUM COMPOUNDS; CHEMICAL ACTIVATION; CHEMICAL REACTION KINETICS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; INFRARED SPECTRA; LAYERS; MOLYBDATES; OXIDATION; OXIDES; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHEMICAL REACTIONS; ENERGY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; KINETICS; MOLYBDENUM COMPOUNDS; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; REACTION KINETICS; REFRACTORY METAL COMPOUNDS; SPECTRA; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 11 refs., 5 tabs., 2 figs.