Published May 1980
| Version v1
Journal article
Schottky barriers based on p-CdCr2Se4 magnetic semiconductor
- 1. AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Барьеры Шоттки на основе магнитного полупроводника п-CdCr
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 14
- Journal Issue
- 5
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1009-1010
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 12574337
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CADMIUM SELENIDES; CHROMIUM SELENIDES; ELECTRIC CONDUCTIVITY; LOW TEMPERATURE; MAGNETIC FIELDS; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; SCHOTTKY BARRIER DIODES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHROMIUM COMPOUNDS; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).