Published 1977
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High temperature neutron diffraction (time-of-flight) in Si-Al-O-N compounds
Description
The Si-Al-O-N compounds, intermediate between the Al2O3-Si3N4-AlN or SiO2 phase, can be used as refractory compounds. The resistance to thermal shocks essentially depends on the coefficients of anisotropic thermal expansion, that explains their experimental determination for Si2N2O by time-of-flight neutron diffraction at high temperature. The nature of the anisotropies was shown to correspond to a crystal structure of Si2N2O involving Si-O-Si bounds along the x axis, and Si-N bounds in the y-z plane
Abstract (French)
Les composes Si-Al-O-N intermediaires des phases Al2O3-Si3N4-AlN ou SiO2 peuvent etre utilises comme refractaires. Les coefficients de dilatation thermique anisotrope determinent en grande partie la resistance aux chocs thermiques, c'est pourquoi on les a determines pour Si2N2O au moyen de la diffraction neutronique en temps de vol a haute temperature. On peut voir que la nature des anisotropies correspond au fait que la structure cristalline de Si2N2O consiste essentiellement en des liaisons de Si-O-Si le long de l'axe x et Si-N dans le plan y-zFiles
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Additional details
Additional titles
- Original title (French)
- Diffraction neutronique (temps de vol) a hautes temperatures des composs Si-Al-O-N
Publishing Information
- Imprint Title
- Grenoble Fundamendal Research Department
- Journal Page Range
- p. 132-137.
- Report number
- CEA-N--1979
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 10431382
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Progress Report
- Descriptors DEI
- NEUTRON DIFFRACTION; REFRACTORIES; SILICON NITRIDES; SILICON OXIDES; THERMAL EXPANSION; TIME-OF-FLIGHT METHOD
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; EXPANSION; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SILICON COMPOUNDS
Optional Information
- Notes
- Imprint:Departement de Recherche Fondamentale de Grenoble.;Bulletin semestriel no. 10, 1977, 1. semestre.