Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study

Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current-voltage (I-V) measurements of these systems are performed as a function of temperature in the range of 313-363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current (I₀), ideality factor (n), barrier height (∅₀) and series resistance (R_S), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of I₀ and ∅ increase with increasing temperature, whereas the values of n and R_S show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ∼76 and 45 A cm^-2 K^-2 for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively. (author)