Published November 2014 | Version v1
Journal article Metadata-only

Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

Creators

  • 1. Department of ECE, Stony Brook University, Stony Brook, NY 11794 (United States)
  • 2. St. Petersburg State Polytechnical University, St. Petersburg (Russian Federation)

Description

A new method for determination of minority carrier lifetimes, mobilities and diffusion lengths is demonstrated. From the transient response of long wavelength infrared barrier detectors with a cut-off of 10 micron, the mobility of the minority holes and their lifetime in bulk InAs0.6Sb0.4 at T = 77 K was determined to be 800 cm2 V−1s−1 and 165 ns, respectively. (fast track communication)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/29/11/112002

Additional details

Identifiers

DOI
10.1088/0268-1242/29/11/112002;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
29
Journal Issue
11
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46082602
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARRIER LIFETIME; CARRIER MOBILITY; DIFFUSION BARRIERS; DIFFUSION LENGTH; HOLES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; MOBILITY; PERFORMANCE; TEMPERATURE DEPENDENCE; TRANSIENTS; WAVELENGTHS
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; INDIUM COMPOUNDS; LENGTH; LIFETIME; MOBILITY; PNICTIDES