Strongly adhesive dry transfer technique for van der Waals heterostructure
Creators
- 1. Center for Quantum Materials, Seoul National University, Seoul 08826 (Korea, Republic of)
- 2. Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States)
- 3. Department of Physics and Astronomy, Seoul National University, Seoul 08826 (Korea, Republic of)
- 4. Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826 (Korea, Republic of)
- 5. Department of Physics, Yonsei University, Seoul 03722 (Korea, Republic of)
Description
That one can stack van der Waals materials with atomically sharp interfaces has provided a new material platform of constructing heterostructures. The technical challenge of mechanical stacking is picking up the exfoliated atomically thin materials after mechanical exfoliation without chemical and mechanical degradation. Chemically inert hexagonal boron nitride (hBN) has been widely used for encapsulating and picking up vdW materials. However, due to the relatively weak adhesion of hBN, assembling vdW heterostructures based on hBN has been limited. We report a new dry transfer technique. We used two vdW semiconductors (ZnPS3 and CrPS4) to pick up and encapsulate layers for vdW heterostructures, which otherwise are known to be hard to fabricate. By combining with optimized polycaprolactone (PCL) providing strong adhesion, we demonstrated various vertical heterostructure devices, including quasi-2D superconducting NbSe2 Josephson junctions with atomically clean interface. The versatility of the PCL-based vdW stacking method provides a new route for assembling complex 2D vdW materials without interfacial degradation. (letter)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/abad0bAdditional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 7
- Journal Issue
- 4
- Journal Page Range
- [7 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52063844
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADHESION; ADHESIVES; BORON NITRIDES; INTERFACES; JOSEPHSON JUNCTIONS; NIOBIUM SELENIDES; SEMICONDUCTOR MATERIALS; VAN DER WAALS FORCES
- Descriptors DEC
- BORON COMPOUNDS; CHALCOGENIDES; MATERIALS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; SUPERCONDUCTING JUNCTIONS; TRANSITION ELEMENT COMPOUNDS; TUNNEL JUNCTIONS