Published December 15, 2014 | Version v1
Journal article Metadata-only

Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

Creators

  • 1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
  • 2. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
  • 3. Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)
  • 4. Department of Physics, Tsinghua University, Beijing 100084 (China)

Description

We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures

Additional details

Identifiers

DOI
10.1063/1.4904418;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
24
Journal Page Range
p. 242104-242104.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46101227
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM COMPOUNDS; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDES; HETEROJUNCTIONS; HOLES; ILLUMINANCE; RELAXATION; VARIATIONS; VELOCITY; VISIBLE RADIATION
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR JUNCTIONS

Optional Information

Notes
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