Published October 31, 2018 | Version v1
Journal article

A ferroelectric field effect transistor based synaptic weight cell

  • 1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556 (United States)
  • 2. Department of Computer Science and Engineering, University of Notre Dame, Notre Dame, IN 46556 (United States)
  • 3. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 (United States)
  • 4. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

Description

Dense analog synaptic crossbar arrays are a promising candidate for neuromorphic hardware accelerators due to the ability to mitigate data movement by performing in-situ vector-matrix products and weight updates within the storage array itself. However, many analog weight storage cells suffer from long latencies or low dynamic ranges, limiting the achievable performance. In this work, we demonstrate that the voltage-controlled partial polarization switching dynamics in ferroelectric-field-effect transistors (FeFET) can be harnessed to enable a 32 state non-volatile analog synaptic weight cell with large dynamic range (67×) and low latency weight updates (50 ns) for an amplitude modulated pulse scheme. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/aad6f8

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
51
Journal Issue
43
Journal Page Range
[7 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52054714
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMPLITUDES; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; POLARIZATION; PULSES
Descriptors DEC
DIELECTRIC MATERIALS; MATERIALS; SEMICONDUCTOR DEVICES; TRANSISTORS