DEPFET detectors for direct detection of MeV dark matter particles
- 1. Max-Planck-Gesellschaft Halbleiterlabor, Munich (Germany)
- 2. Atominstitut, Technische Universitaet Wien, Vienna (Austria)
- 3. Institut fuer Hochenergiephysik, Oesterreichische Akademie der Wissenschaften, Vienna (Austria)
Description
The existence of dark matter is undisputed, while the nature of it is still unknown. Explaining dark matter with the existence of a new unobserved particle is among the most promising possible solutions. Recently dark matter candidates in the MeV mass region received more and more interest. In comparison to the mass region between a few GeV to several TeV, this region is experimentally largely unexplored. We discuss the application of a RNDR DEPFET semiconductor detector for direct searches for dark matter in the MeV mass region. We present the working principle of the RNDR DEPFET devices and review the performance obtained by previously performed prototype measurements. The future potential of the technology as dark matter detector is discussed and the sensitivity for MeV dark matter detection with RNDR DEPFET sensors is presented. Under the assumption of six background events in the region of interest and an exposure of 1 kg year a sensitivity of about anti σe = 10-41 cm2 for dark matter particles with a mass of 10 MeV can be reached. (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1140/epjc/s10052-017-5474-5Additional details
Identifiers
Publishing Information
- Journal Title
- European Physical Journal. C, Particles and Fields (Online)
- Journal Volume
- 77
- Journal Issue
- 12
- Journal Page Range
- p. 1-11
- ISSN
- 1434-6052
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 49020989
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BACKGROUND NOISE; BACKGROUND RADIATION; BETA-MINUS DECAY; ELECTRON DETECTION; ELECTRONS; EQUIVALENT CIRCUITS; EV RANGE 01-10; EV RANGE 10-100; FIELD EFFECT TRANSISTORS; INTEGRAL CROSS SECTIONS; LOW LEVEL COUNTERS; PARTICLE INTERACTIONS; PHOSPHORUS 32; POSTULATED PARTICLES; RECOILS; REST MASS; SEMICONDUCTOR DETECTORS; SENSITIVITY; SILICON 32; TRITIUM
- Descriptors DEC
- BETA DECAY; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHARGED PARTICLE DETECTION; CROSS SECTIONS; DAYS LIVING RADIOISOTOPES; DECAY; DETECTION; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; ENERGY RANGE; EV RANGE; EVEN-EVEN NUCLEI; FERMIONS; HYDROGEN ISOTOPES; INTERACTIONS; ISOTOPES; LEPTONS; LIGHT NUCLEI; MASS; MEASURING INSTRUMENTS; NOISE; NUCLEAR DECAY; NUCLEI; ODD-EVEN NUCLEI; ODD-ODD NUCLEI; PHOSPHORUS ISOTOPES; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SILICON ISOTOPES; TRANSISTORS; YEARS LIVING RADIOISOTOPES