Published April 2015 | Version v1
Journal article

Effect of epitaxy on interband transitions in ferroelectric KNbO3

  • 1. Microelectronics and Materials Physics Laboratories, University of Oulu, PO Box 4500, FI-90014 Oulun Yliopisto (Finland)
  • 2. NanoSpin, Department of Applied Physics, Aalto University School of Science, PO Box 15100, FI-00076 Aalto (Finland)
  • 3. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8 (Czech Republic)

Description

Very large lattice strain and strain-induced polarization are achieved in KNbO3 using epitaxial growth of a thin KNbO3 film onto a (001)-oriented SrTiO3 single-crystal substrate. We demonstrate experimentally that epitaxy produces dramatic changes of interband transitions in the film compared to those of a reference KNbO3 crystal: the energies of transitions change, some transitions are substantially suppressed and new ones appear in the film. A comparison of the experimental observations with theoretical calculations points to yet unexplored phenomena. Our results indicate that optical refraction and electro-optical coefficients of ferroelectric films can be controlled by epitaxial growth, which is of importance for emerging photonic and optoelectronic applications. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1367-2630/17/4/043048

Additional details

Publishing Information

Journal Title
New Journal of Physics
Journal Volume
17
Journal Issue
4
Journal Page Range
[8 p.]
ISSN
1367-2630