Published December 16, 1988
| Version v1
Journal article
Diffusion of impurities from implanted silicon layers by rapid thermal annealing
- 1. Leningradskij Politekhnicheskij Inst., Leningrad (USSR)
Description
An analysis of the diffusion of substitutional dopants from ion-implanted Si semiconductor layers at short time rapid thermal annealing (RTA) is presented. The calculated results on the kinetic dependences of vacancy concentration induced by radiation and by annealing and the depth distribution of ion-implanted phosphorus before and after RTA are given. The acceleration of the substitutional dopant diffusion at short time RTA has been explained using the vacancy mechanism only
Additional details
Publishing Information
- Journal Title
- Physica Status Solidi A
- Journal Volume
- 110
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K61-K65
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 20038801
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; DEPTH; DIFFUSION; DISSOCIATION; DOPED MATERIALS; ION IMPLANTATION; LAYERS; PHOSPHORUS 31 BEAMS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SILICON; SPATIAL DISTRIBUTION; TIME DEPENDENCE; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELEMENTS; HEAT TREATMENTS; ION BEAMS; MATERIALS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Short note.