Published December 23, 2013 | Version v1
Journal article Metadata-only

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

Creators

  • 1. LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore)
  • 2. LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore)
  • 3. Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China)
  • 4. Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)
  • 5. Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

Description

Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants

Additional details

Identifiers

DOI
10.1063/1.4858386;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
103
Journal Issue
26
Journal Page Range
p. 263501-263501.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45074458
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRONS; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS
Descriptors DEC
ALUMINIUM COMPOUNDS; CHEMICAL COATING; DEPOSITION; ELEMENTARY PARTICLES; EMISSION; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE COATING

Optional Information

Notes
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