Published November 29, 2013 | Version v1
Journal article

Rice-straw-like structure of silicon nanowire arrays for a hydrogen gas sensor

  • 1. Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

Description

A rice-straw-like silicon nanowire (SiNW) array was developed for hydrogen gas sensing applications. The straight-aligned SiNW array sensor was first fabricated by the metal-assisted electroless etching (MAEE) technique. Rice-straw-like SiNW arrays were formed using a repeated MAEE technique. Hydrogen sensing characteristics were measured for gas concentrations from 20 to 1000 ppm at room temperature. The rice-straw-like SiNW-array-based hydrogen gas sensor performed with low noise and a high response (232.5%) for 1000 ppm hydrogen gas. It was found that the rice-straw-like SiNW-array hydrogen gas sensor had a much better response (approximately 2.5 times) than the straight-aligned SiNW-array sensor. The rice-straw-like SiNW-array structure effectively increased the surface area and the concentration of silicon oxide, which provided additional binding sites for gas molecules. Thus, the rice-straw-like SiNW-array-based hydrogen gas sensor possessed good sensing properties and has the potential for mass production of sensing devices. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/24/47/475502

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
24
Journal Issue
47
Journal Page Range
[8 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46073083
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ETCHING; HYDROGEN; METALS; NANOWIRES; SENSORS; SILICON; SILICON OXIDES; SURFACE AREA; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
CHALCOGENIDES; ELEMENTS; NANOSTRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SURFACE FINISHING; SURFACE PROPERTIES; TEMPERATURE RANGE