Rice-straw-like structure of silicon nanowire arrays for a hydrogen gas sensor
- 1. Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)
Description
A rice-straw-like silicon nanowire (SiNW) array was developed for hydrogen gas sensing applications. The straight-aligned SiNW array sensor was first fabricated by the metal-assisted electroless etching (MAEE) technique. Rice-straw-like SiNW arrays were formed using a repeated MAEE technique. Hydrogen sensing characteristics were measured for gas concentrations from 20 to 1000 ppm at room temperature. The rice-straw-like SiNW-array-based hydrogen gas sensor performed with low noise and a high response (232.5%) for 1000 ppm hydrogen gas. It was found that the rice-straw-like SiNW-array hydrogen gas sensor had a much better response (approximately 2.5 times) than the straight-aligned SiNW-array sensor. The rice-straw-like SiNW-array structure effectively increased the surface area and the concentration of silicon oxide, which provided additional binding sites for gas molecules. Thus, the rice-straw-like SiNW-array-based hydrogen gas sensor possessed good sensing properties and has the potential for mass production of sensing devices. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/24/47/475502Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 24
- Journal Issue
- 47
- Journal Page Range
- [8 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46073083
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ETCHING; HYDROGEN; METALS; NANOWIRES; SENSORS; SILICON; SILICON OXIDES; SURFACE AREA; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; NANOSTRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SURFACE FINISHING; SURFACE PROPERTIES; TEMPERATURE RANGE