Concentration of point defects and site occupancy behavior in ternary NiAl alloys
Description
A model was established under the mean-field first nearest neighbor interaction approximation to evaluate the concentration of point defects and the site occupancy of micro alloyed NiAl. The theoretical results suggest that micro alloying has only slight effect on point defect formation. The vacancy concentration decreases in both the Al-rich and the Ni-rich alloys as compared to binary alloys, while the concentration of the Al anti-site defects increases and that of the Ni anti-site defects decreases by about half the difference of vacancy concentration between the binary and ternary systems on the Al- and Ni-rich sides, respectively. At low concentration, Ga, Si, Ge, Ti, V, Zr, Nb, Hf and Ta occupy the Al sublattice, whereas Mn, Fe and Co occupy the Ni sublattice; the dependence of occupancy on composition and temperature is weak. By contrast, the site preference of Mo, W and Cr changes considerably with alloy chemistry and temperature and they show strong tendency to occupy both sublattices at high temperature. In general, with increasing atomic number, transition metal elements in the same period increasingly tend to substitute for Ni
Additional details
Identifiers
- DOI
- 10.1016/j.msea.2003.09.010;
- PII
- S092150930300772X;
Publishing Information
- Journal Title
- Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
- Journal Volume
- 365
- Journal Issue
- 1-2
- Journal Page Range
- p. 85-89
- ISSN
- 0921-5093
- CODEN
- MSAPE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38073359
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- APPROXIMATIONS; ATOMIC NUMBER; BINARY ALLOY SYSTEMS; DEFECTS; HYDROFLUORIC ACID; INTERMETALLIC COMPOUNDS; MEAN-FIELD THEORY; TRANSITION ELEMENTS; VACANCIES
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; METALS; POINT DEFECTS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.