Published August 1, 2014 | Version v1
Journal article

Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes

  • 1. Department of Physics, School of Science, Jimei University, Xiamen 361021 (China)
  • 2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)
  • 3. Department of Physics, Dalian University of Technology, Dalian 116023 (China)

Description

The chemical reaction between ErF3 dopant and tris (8-hydroxy quinoline) aluminum (Alq3) host is investigated by photoelectron spectroscopy. In ErF3–Alq3 composite, the Al 2p core level spectrum shows asymmetry and it is fitted into two contributions: one from Al ions in Alq3 (Al-O-C bond) and the other from Al ions in AlF3 (Al-F bond). Quantitative analyses of each component area support the model that a part of Alq3 is reacted with ErF3 and form the new production of Alq3−xFx. The Er 4d binding energy of ErF3 doped Alq3 film is shifted by 1.5 eV with respect to the one in pristine ErF3 film, which reveals there is a charge transfer from organic molecule to Er atom. Besides, the electroluminescent intensity in visible region decreased greatly with the increase of ErF3 dopant, which shows that the energy is transferred from Alq3 exciton to Erq3 luminescence center.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2014.04.115

Additional details

Identifiers

DOI
10.1016/j.apsusc.2014.04.115;
PII
S0169-4332(14)00889-7;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
309
Journal Page Range
p. 22-26
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.